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ZXMP10A18K
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ V GS = 10V; T amb =25°C (b)
@ V GS = 10V; T amb =70°C (b)
@ V GS = 10V; T amb =25°C (a)
Pulsed drain current (c)
Continuous source current (body diode) (b)
Pulsed source current (body diode) (c)
Power dissipation at T amb = 25°C (a)
Linear derating factor
Power dissipation at T amb = 25°C (b)
Linear derating factor
Power dissipation at T amb = 25°C (d)
Linear derating factor
Operating and storage temperature range
Symbol
V DSS
V GS
I D
I DM
I S
I SM
P D
P D
P D
T j , T stg
Limit
-100
± 20
-5.9
-4.7
-3.8
-21.1
-10
-21.1
4.3
34.4
10.2
81.3
2.17
17.4
-55 to +150
Unit
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to
ambient (a)
R JA
29
°C/W
Junction to ambient (b)
Junction to ambient (d)
R JA
R JA
12.3
57.6
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 1 - August 2006
? Zetex Semiconductors plc 2006
2
www.zetex.com
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